2SC111
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC111
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package:
TO5
2SC111
Transistor Equivalent Substitute - Cross-Reference Search
2SC111
Datasheet (PDF)
0.1. Size:142K jmnic
2sc1116.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
0.2. Size:176K inchange semiconductor
2sc1115.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1115DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
0.3. Size:177K inchange semiconductor
2sc1111.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1111DESCRIPTIONWith TO-3 PackageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
0.4. Size:176K inchange semiconductor
2sc1112.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1112DESCRIPTIONWith TO-3 PackageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
0.5. Size:176K inchange semiconductor
2sc1114.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1114DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
0.6. Size:180K inchange semiconductor
2sc1113.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1113DESCRIPTIONHigh Current CapacityWide area of safe operationMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in audio frequency power amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
0.7. Size:177K inchange semiconductor
2sc1116.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1116DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
