All Transistors. 2SC1112 Datasheet

 

2SC1112 Datasheet and Replacement


   Type Designator: 2SC1112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
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2SC1112 Datasheet (PDF)

 ..1. Size:176K  inchange semiconductor
2sc1112.pdf pdf_icon

2SC1112

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1112DESCRIPTIONWith TO-3 PackageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

 8.1. Size:142K  jmnic
2sc1116.pdf pdf_icon

2SC1112

JMnic Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

 8.2. Size:176K  inchange semiconductor
2sc1115.pdf pdf_icon

2SC1112

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1115DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

 8.3. Size:177K  inchange semiconductor
2sc1111.pdf pdf_icon

2SC1112

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1111DESCRIPTIONWith TO-3 PackageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: JC547B | BDW92 | FMB3904 | BTD2444S3 | 2SD2055 | 2SC3770 | MQ2218A

Keywords - 2SC1112 transistor datasheet

 2SC1112 cross reference
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