2N1651 Specs and Replacement
Type Designator: 2N1651
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 106 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 110 °C
Electrical Characteristics
Transition Frequency (ft): 0.6 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO3
2N1651 Substitution
- BJT ⓘ Cross-Reference Search
2N1651 datasheet
SFP085N165C3, SFB082N165C3 N-MOSFET 165V, 7.5m , 120A Features Product Summary Extremely low on-resistance RDS(on) VDS 165V Excellent QgxRDS(on) product(FOM) RDS(on) 7.5m Qualified according to JEDEC criteria ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Teste... See More ⇒
SFW082N165C3 N-MOSFET 165V, 7.5m , 120A Features Product Summary Extremely low on-resistance RDS(on) VDS 165V Excellent QgxRDS(on) product(FOM) RDS(on) 7.5m Qualified according to JEDEC criteria ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalan... See More ⇒
Detailed specifications: 2N1645A, 2N1646, 2N1647, 2N1648, 2N1649, 2N164A, 2N165, 2N1650, BD135, 2N1652, 2N1653, 2N1654, 2N1655, 2N1656, 2N1657, 2N1658, 2N1658-13
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