2SC116 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC116
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 35 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 4
Noise Figure, dB: -
Package: TO5
2SC116 Transistor Equivalent Substitute - Cross-Reference Search
2SC116 Datasheet (PDF)
2sc1169.pdf
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2sc1162.pdf
2SC1162Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SA715OutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 5VCollector current IC 2.5 ACollector peak current
2sc1162.pdf
2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier EmitterCollectorBase CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-DABERange 60~120 100~200 160~320FCNHLMK DJG
2sc1162.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors2SC1162 TRANSISTOR (NPN)TO-126 FEATURES 1. EMITTERLow Frequency Power Amplifier 2. COLLECOTR3. BASE Equivalent Circuit C1162=Device code Solid dot = Green molding compound device, if none, the normal device C1162 XXXX=Code ORDERING INFORMATION Part Number Package
2sc1162.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION With TO-126 package Complement to type 2SA715 APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base
2sc1162.pdf
2SC1162(NPN) TO-126 Transistor TO-1261. EMITTER 2. COLLECOTR 3. BASE 3 21 Features2.5007.400 Low frequency power amplifier 2.9001.1007.8001.5003.9003.0004.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.20010.600Symbol Parameter Value Units0.00011.0000.300VCBO Collector-Emitter Voltage 35 VVCEO Collector-Emitter Voltage 35 V2.100
2sc1162.pdf
isc Silicon NPN Power Transistor 2SC1162DESCRIPTIONHigh Collector Current I = 2.5ACCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageComplement to Type 2SA715Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier a
2sc1161.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1161DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for low frequency high voltage power amplifierTV vertical deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc1163.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1163DESCRIPTIONHigh Collector Current I = 0.1ACCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for low frequency power amplifier appl
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
