All Transistors. 2SC1166 Datasheet

 

2SC1166 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC1166

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 125 ¬įC

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT33

2SC1166 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC1166 Datasheet (PDF)

1.1. 2sc1166.pdf Size:49K _no

2SC1166

4.1. 2sc1169.pdf Size:63K _toshiba

2SC1166
2SC1166

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.2. 2sc1162.pdf Size:29K _hitachi

2SC1166
2SC1166

2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25įC) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V Collector current IC 2.5 A Collector peak current IC(

 4.3. 2sc1162.pdf Size:392K _secos

2SC1166
2SC1166

2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of ‚Äú-C‚ÄĚ specifies halogen & lead-free FEATURES TO-126 ? Low frequency power amplifier ?Emitter ?Collector ?Base CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D A B E Range 60~120 100~200 160~320 F C N H L M K D J G Collector

4.4. 2sc1162.pdf Size:172K _jmnic

2SC1166
2SC1166

JMnic Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA715 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volt

 4.5. 2sc1163.pdf Size:113K _inchange_semiconductor

2SC1166
2SC1166

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 DESCRIPTION · ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute

4.6. 2sc1162.pdf Size:141K _inchange_semiconductor

2SC1166
2SC1166

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA715 APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute Maximun Ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Colle

4.7. 2sc1161.pdf Size:127K _inchange_semiconductor

2SC1166
2SC1166

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute

4.8. 2sc1162.pdf Size:180K _lge

2SC1166
2SC1166

2SC1162(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features 2.500 7.400 Low frequency power amplifier 2.900 1.100 7.800 1.500 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.200 10.600 Symbol Parameter Value Units 0.000 11.000 0.300 VCBO Collector-Emitter Voltage 35 V VCEO Collector-Emitter Voltage 35 V 2.100 2.3

Datasheet: 2SC1162 , 2SC1162B , 2SC1162C , 2SC1162D , 2SC1162WT , 2SC1163 , 2SC1164 , 2SC1165 , C1815 , 2SC1167 , 2SC1168 , 2SC1169 , 2SC116H , 2SC116T , 2SC117 , 2SC1170 , 2SC1170A .

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