All Transistors. 2SC1212C Datasheet

 

2SC1212C Datasheet and Replacement


   Type Designator: 2SC1212C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 160 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO126
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2SC1212C Datasheet (PDF)

 7.1. Size:29K  hitachi
 2sc1212.pdf pdf_icon

2SC1212C

2SC1212, 2SC1212ASilicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SC1212 2SC1212A UnitCollector to base voltage VCBO 50 80 VCollector to emitter voltage VCEO 50 80 VEmitter to base voltage VEBO 44VCollector current IC 11ACollector power diss

 7.2. Size:179K  jmnic
 2sc1212.pdf pdf_icon

2SC1212C

JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SC121

 7.3. Size:146K  inchange semiconductor
 2sc1212 2sc1212a.pdf pdf_icon

2SC1212C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS V

 7.4. Size:214K  inchange semiconductor
 2sc1212a.pdf pdf_icon

2SC1212C

isc Silicon NPN Power Transistor 2SC1212ADESCRIPTIONHigh Collector Current -I = 1ACCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

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Keywords - 2SC1212C transistor datasheet

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