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2SC1214 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC1214

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT33

2SC1214 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC1214 Datasheet (PDF)

1.1. 2sc1214.pdf Size:22K _hitachi

2SC1214
2SC1214

2SC1214 Silicon NPN Epitaxial ADE-208-1050 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1214 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collec

4.1. r07ds0432ej 2sc1213ak-1.pdf Size:102K _renesas

2SC1214
2SC1214

 Preliminary Datasheet R07DS0432EJ0300 2SC1213A(K) (Previous: REJ03G0685-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application • Low frequency amplifier • Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collec

4.2. r07ds0431ej 2sc1213a-1.pdf Size:170K _renesas

2SC1214
2SC1214

 Preliminary Datasheet R07DS0431EJ0300 2SC1213, 2SC1213A (Previous: REJ03G0684-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item S

 4.3. 2sc1215 e.pdf Size:58K _panasonic

2SC1214
2SC1214

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0± 0.2 4.0± 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base

4.4. 2sc1215.pdf Size:62K _panasonic

2SC1214
2SC1214

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0± 0.2 4.0± 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base

 4.5. 2sc1212.pdf Size:29K _hitachi

2SC1214
2SC1214

2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEBO 44V Collector current IC 11A Collector power diss

4.6. 2sc1213.pdf Size:23K _hitachi

2SC1214
2SC1214

2SC1213, 2SC1213A Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC1213 2SC1213A Unit Collector to base voltage VCBO 35 50 V Collector to emitter voltage VCEO 35 50 V Emitter to base voltage

4.7. 2sc1213-2sc1213a.pdf Size:277K _secos

2SC1214
2SC1214

2SC1213, 2SC1213A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SA673 and 2SA673A 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE(1) J A D Product-Rank 2SC1213-B 2SC1213-C 2SC1213-D

4.8. 2sc1212.pdf Size:179K _jmnic

2SC1214
2SC1214

JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION · ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC121

4.9. 2sc1212a.pdf Size:214K _inchange_semiconductor

2SC1214
2SC1214

isc Silicon NPN Power Transistor 2SC1212A DESCRIPTION ·High Collector Current -I = 1A C ·Collector-Emitter Breakdown Voltage- : V = 80V(Min) (BR)CEO ·Good Linearity of h FE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

4.10. 2sc1212 2sc1212a.pdf Size:146K _inchange_semiconductor

2SC1214
2SC1214

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION · ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS V

4.11. 2sc1212.pdf Size:215K _inchange_semiconductor

2SC1214
2SC1214

isc Silicon NPN Power Transistor 2SC1212 DESCRIPTION ·High Collector Current I = 1A C ·Collector-Emitter Breakdown Voltage- : V = 50V(Min) (BR)CEO ·Good Linearity of h FE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMET

Datasheet: 2SC1212 , 2SC1212A , 2SC1212AB , 2SC1212AC , 2SC1212B , 2SC1212C , 2SC1213 , 2SC1213A , BF199 , 2SC1214B , 2SC1215 , 2SC1215S , 2SC1215T , 2SC1215Z , 2SC1216 , 2SC1217 , 2SC1218 .

 

 
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