All Transistors. 2SC1214 Datasheet

 

2SC1214 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC1214
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92

 2SC1214 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC1214 Datasheet (PDF)

 ..1. Size:22K  hitachi
2sc1214.pdf

2SC1214 2SC1214

2SC1214Silicon NPN EpitaxialADE-208-1050 (Z)1st. EditionMar. 2001ApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1214Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 4VCollector current IC 500 mACollec

 8.1. Size:170K  renesas
r07ds0431ej 2sc1213a-1.pdf

2SC1214 2SC1214

Preliminary Datasheet R07DS0431EJ03002SC1213, 2SC1213A (Previous: REJ03G0684-0200)Rev.3.00Silicon NPN Epitaxial Jun 07, 2011Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item S

 8.2. Size:102K  renesas
r07ds0432ej 2sc1213ak-1.pdf

2SC1214 2SC1214

Preliminary Datasheet R07DS0432EJ03002SC1213A(K) (Previous: REJ03G0685-0200)Rev.3.00Silicon NPN Epitaxial Jun 07, 2011Application Low frequency amplifier Medium speed switching Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollec

 8.3. Size:58K  panasonic
2sc1215 e.pdf

2SC1214 2SC1214

Transistor2SC1215Silicon NPN epitaxial planer typeFor high-frequency (VHF band) amplification and oscillationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCEO 20 VEmitter to base

 8.4. Size:62K  panasonic
2sc1215.pdf

2SC1214 2SC1214

Transistor2SC1215Silicon NPN epitaxial planer typeFor high-frequency (VHF band) amplification and oscillationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCEO 20 VEmitter to base

 8.5. Size:23K  hitachi
2sc1213.pdf

2SC1214 2SC1214

2SC1213, 2SC1213ASilicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA673 and 2SA673AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1213, 2SC1213AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SC1213 2SC1213A UnitCollector to base voltage VCBO 35 50 VCollector to emitter voltage VCEO 35 50 VEmitter to base voltage

 8.6. Size:29K  hitachi
2sc1212.pdf

2SC1214 2SC1214

2SC1212, 2SC1212ASilicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SC1212 2SC1212A UnitCollector to base voltage VCBO 50 80 VCollector to emitter voltage VCEO 50 80 VEmitter to base voltage VEBO 44VCollector current IC 11ACollector power diss

 8.7. Size:277K  secos
2sc1213-2sc1213a.pdf

2SC1214 2SC1214

2SC1213, 2SC1213A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SA673 and 2SA673A 1Emitter 1112Collector 2223Base 333CLASSIFICATION OF hFE(1) JA DProduct-Rank 2SC1213-B 2SC1213-C 2SC1213-D

 8.8. Size:419K  jiangsu
2sc1213a.pdf

2SC1214 2SC1214

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. EMITTER Low Frequency Amplifier2. COLLECTOR Complementary Pair with 2SA673A3. BASE Equivalent Circuit

 8.9. Size:179K  jmnic
2sc1212.pdf

2SC1214 2SC1214

JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SC121

 8.10. Size:146K  inchange semiconductor
2sc1212 2sc1212a.pdf

2SC1214 2SC1214

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS V

 8.11. Size:214K  inchange semiconductor
2sc1212a.pdf

2SC1214 2SC1214

isc Silicon NPN Power Transistor 2SC1212ADESCRIPTIONHigh Collector Current -I = 1ACCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 8.12. Size:215K  inchange semiconductor
2sc1212.pdf

2SC1214 2SC1214

isc Silicon NPN Power Transistor 2SC1212DESCRIPTIONHigh Collector Current I = 1ACCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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