2SC1214B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1214B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92
2SC1214B Transistor Equivalent Substitute - Cross-Reference Search
2SC1214B Datasheet (PDF)
2sc1214.pdf
2SC1214Silicon NPN EpitaxialADE-208-1050 (Z)1st. EditionMar. 2001ApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1214Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 4VCollector current IC 500 mACollec
r07ds0431ej 2sc1213a-1.pdf
Preliminary Datasheet R07DS0431EJ03002SC1213, 2SC1213A (Previous: REJ03G0684-0200)Rev.3.00Silicon NPN Epitaxial Jun 07, 2011Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item S
r07ds0432ej 2sc1213ak-1.pdf
Preliminary Datasheet R07DS0432EJ03002SC1213A(K) (Previous: REJ03G0685-0200)Rev.3.00Silicon NPN Epitaxial Jun 07, 2011Application Low frequency amplifier Medium speed switching Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollec
2sc1215 e.pdf
Transistor2SC1215Silicon NPN epitaxial planer typeFor high-frequency (VHF band) amplification and oscillationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCEO 20 VEmitter to base
2sc1215.pdf
Transistor2SC1215Silicon NPN epitaxial planer typeFor high-frequency (VHF band) amplification and oscillationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCEO 20 VEmitter to base
2sc1213.pdf
2SC1213, 2SC1213ASilicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA673 and 2SA673AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1213, 2SC1213AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SC1213 2SC1213A UnitCollector to base voltage VCBO 35 50 VCollector to emitter voltage VCEO 35 50 VEmitter to base voltage
2sc1212.pdf
2SC1212, 2SC1212ASilicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SC1212 2SC1212A UnitCollector to base voltage VCBO 50 80 VCollector to emitter voltage VCEO 50 80 VEmitter to base voltage VEBO 44VCollector current IC 11ACollector power diss
2sc1213-2sc1213a.pdf
2SC1213, 2SC1213A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SA673 and 2SA673A 1Emitter 1112Collector 2223Base 333CLASSIFICATION OF hFE(1) JA DProduct-Rank 2SC1213-B 2SC1213-C 2SC1213-D
2sc1213a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. EMITTER Low Frequency Amplifier2. COLLECTOR Complementary Pair with 2SA673A3. BASE Equivalent Circuit
2sc1212.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SC121
2sc1212 2sc1212a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS V
2sc1212a.pdf
isc Silicon NPN Power Transistor 2SC1212ADESCRIPTIONHigh Collector Current -I = 1ACCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sc1212.pdf
isc Silicon NPN Power Transistor 2SC1212DESCRIPTIONHigh Collector Current I = 1ACCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
