2SC1227 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1227
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3
2SC1227 Transistor Equivalent Substitute - Cross-Reference Search
2SC1227 Datasheet (PDF)
2sc1227.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1227DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor clocked voltage convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
2sc1226 2sc1226a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A DESCRIPTION With TO-202 package Complement to type 2SA699/699A APPLICATIONS For medium power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMET
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
