2SC1301 Specs and Replacement
Type Designator: 2SC1301
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO3
2SC1301 Substitution
- BJT ⓘ Cross-Reference Search
2SC1301 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1309 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For TV horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1308 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For TV horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col... See More ⇒
Detailed specifications: 2SC1297 , 2SC1298 , 2SC1299 , 2SC1299F , 2SC13 , 2SC130 , 2SC1300 , 2SC1300F , TIP122 , 2SC1302 , 2SC1303 , 2SC1303Z , 2SC1304 , 2SC1306 , 2SC1307 , 2SC1308 , 2SC1308K .
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