2N1669 Specs and Replacement
Type Designator: 2N1669
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 90 °C
Electrical Characteristics
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2N1669 Substitution
- BJT ⓘ Cross-Reference Search
2N1669 datasheet
Detailed specifications: 2N1661, 2N1662, 2N1663, 2N1664, 2N1665, 2N1666, 2N1667, 2N1668, 2SC5198, 2N167, 2N1670, 2N1672, 2N1672A, 2N1673, 2N1674, 2N1675, 2N1676
Keywords - 2N1669 pdf specs
2N1669 cross reference
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History: L8550QLT1G | EN2894A | 2N5702
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