2N167 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N167
Material of Transistor: Ge
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.065 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.075 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 65
Noise Figure, dB: -
Package: OV17
2N167 Transistor Equivalent Substitute - Cross-Reference Search
2N167 Datasheet (PDF)
2n1671b 2n1671 2n1671a.pdf
2N1671 2N1671A 2N1671B PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS The 2N1671, 2N1671A AND 2N1671B are mounted in TO-5 metal package. They are designed for medium power switching, oscillator and pulse timing circuit. Highly Stable Negative Resistance and Firing Voltage Low Firing Current High Pulse Curent Capabilities Simplified Circuit Design Compliance
2n1671.pdf
UNIJUNCTION TRANSISTORDESCRIPTION:The 2N1671 is a UnijunctionPACKAGE STYLE TO-18 (MOD)Transistor Used in General PurposePulse, Timing, Sense and TriggerApplications.MAXIMUM RATINGSI 2.0 A (P LSED)V 30 VP 450 mW @ T = 25 CT -65 C to +140 CT -65 C to +150 C1 = E I ER 2 = BASE 4 = BASE 255 C/WCHARACTERISTICS = 25 CSYMBOL TEST CONDITIONS MINIMUM TYPICA
Datasheet: 2N1662 , 2N1663 , 2N1664 , 2N1665 , 2N1666 , 2N1667 , 2N1668 , 2N1669 , 2SD669 , 2N1670 , 2N1672 , 2N1672A , 2N1673 , 2N1674 , 2N1675 , 2N1676 , 2N1677 .
