2N1670 Specs and Replacement
Type Designator: 2N1670
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO9
2N1670 Substitution
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2N1670 datasheet
2N1671 2N1671A 2N1671B PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS The 2N1671, 2N1671A AND 2N1671B are mounted in TO-5 metal package. They are designed for medium power switching, oscillator and pulse timing circuit. Highly Stable Negative Resistance and Firing Voltage Low Firing Current High Pulse Curent Capabilities Simplified Circuit Design Compliance ... See More ⇒
UNIJUNCTION TRANSISTOR DESCRIPTION The 2N1671 is a Unijunction PACKAGE STYLE TO-18 (MOD) Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. MAXIMUM RATINGS I 2.0 A (P LSED) V 30 V P 450 mW @ T = 25 C T -65 C to +140 C T -65 C to +150 C 1 = E I ER 2 = BASE 4 = BASE 255 C/W CHARACTERISTICS = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICA... See More ⇒
Detailed specifications: 2N1663, 2N1664, 2N1665, 2N1666, 2N1667, 2N1668, 2N1669, 2N167, D965, 2N1672, 2N1672A, 2N1673, 2N1674, 2N1675, 2N1676, 2N1677, 2N1678
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