2SC1351 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1351
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO39
2SC1351 Transistor Equivalent Substitute - Cross-Reference Search
2SC1351 Datasheet (PDF)
2sc1359 e.pdf
Transistor2SC1359Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA8385.0 0.2 4.0 0.2FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector t
2sc1359.pdf
Transistor2SC1359Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA8385.0 0.2 4.0 0.2FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector t
2sc1358.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1358DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor large screen color deflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
