2N1675 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1675
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO32
2N1675 Transistor Equivalent Substitute - Cross-Reference Search
2N1675 Datasheet (PDF)
2n1671b 2n1671 2n1671a.pdf
2N1671 2N1671A 2N1671B PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS The 2N1671, 2N1671A AND 2N1671B are mounted in TO-5 metal package. They are designed for medium power switching, oscillator and pulse timing circuit. Highly Stable Negative Resistance and Firing Voltage Low Firing Current High Pulse Curent Capabilities Simplified Circuit Design Compliance
2n1671.pdf
UNIJUNCTION TRANSISTORDESCRIPTION:The 2N1671 is a UnijunctionPACKAGE STYLE TO-18 (MOD)Transistor Used in General PurposePulse, Timing, Sense and TriggerApplications.MAXIMUM RATINGSI 2.0 A (P LSED)V 30 VP 450 mW @ T = 25 CT -65 C to +140 CT -65 C to +150 C1 = E I ER 2 = BASE 4 = BASE 255 C/WCHARACTERISTICS = 25 CSYMBOL TEST CONDITIONS MINIMUM TYPICA
Datasheet: 2N1668 , 2N1669 , 2N167 , 2N1670 , 2N1672 , 2N1672A , 2N1673 , 2N1674 , BC556 , 2N1676 , 2N1677 , 2N1678 , 2N1679 , 2N167A , 2N168 , 2N1680 , 2N1681 .
