All Transistors. 2SC1361 Datasheet

 

2SC1361 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC1361
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 9 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: TO92

 2SC1361 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC1361 Datasheet (PDF)

 8.1. Size:37K  panasonic
2sc1360.pdf

2SC1361
2SC1361

Transistor2SC1360, 2SC1360ASilicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Large collector power dissipation PC.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to 2SC1360 50VCBO Vbase voltage 2SC1360A 60Collector to 2S

 8.2. Size:41K  panasonic
2sc1360 e.pdf

2SC1361
2SC1361

Transistor2SC1360, 2SC1360ASilicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Large collector power dissipation PC.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to 2SC1360 50VCBO Vbase voltage 2SC1360A 60Collector to 2S

 8.3. Size:198K  lzg
2sc1360-a 3da1360-a.pdf

2SC1361
2SC1361

2SC1360(3DA1360) 2SC1360A(3DA1360A) NPN /SILICON NPN TRANSISTOR : Purpose: Picture IF amplifier . :, Features: High f , large P . T C/Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SC1360 50 VCBO V 2SC1360A 60 2SC1360

 8.4. Size:177K  inchange semiconductor
2sc1367.pdf

2SC1361
2SC1361

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1367DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 8.5. Size:184K  inchange semiconductor
2sc1368.pdf

2SC1361
2SC1361

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1368DESCRIPTIONHigh Collector Current I = 1.5ACCollector-Emitter Breakdown Voltage-: V = 25V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.AB

Datasheet: 2SC1356 , 2SC1356F , 2SC1358 , 2SC1358A , 2SC1359 , 2SC136 , 2SC1360 , 2SC1360A , 2N5551 , 2SC1362 , 2SC1363 , 2SC1364 , 2SC1365 , 2SC1366 , 2SC1367 , 2SC1367A , 2SC1368 .

 

 
Back to Top