2SC1366 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1366
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 2000 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO39
2SC1366 Transistor Equivalent Substitute - Cross-Reference Search
2SC1366 Datasheet (PDF)
2sc1360.pdf
Transistor2SC1360, 2SC1360ASilicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Large collector power dissipation PC.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to 2SC1360 50VCBO Vbase voltage 2SC1360A 60Collector to 2S
2sc1360 e.pdf
Transistor2SC1360, 2SC1360ASilicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Large collector power dissipation PC.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to 2SC1360 50VCBO Vbase voltage 2SC1360A 60Collector to 2S
2sc1360-a 3da1360-a.pdf
2SC1360(3DA1360) 2SC1360A(3DA1360A) NPN /SILICON NPN TRANSISTOR : Purpose: Picture IF amplifier . :, Features: High f , large P . T C/Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SC1360 50 VCBO V 2SC1360A 60 2SC1360
2sc1367.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1367DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sc1368.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1368DESCRIPTIONHigh Collector Current I = 1.5ACCollector-Emitter Breakdown Voltage-: V = 25V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.AB
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
