2SC14 Datasheet and Replacement

   Type Designator: 2SC14
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.065 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 8 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO5

2SC14 Substitution

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2SC14 Datasheet (PDF)

0.1. Size:51K panasonic
2sc1473 e.pdf pdf_icon

Transistor2SC1473, 2SC1473ASilicon NPN triple diffusion planer typeFor general amplificationUnit: mm2SC1473 complementary to 2SA10185.0 0.2 4.0 0.22SC1473A complementary to 2SA1767FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector t

0.2. Size:47K panasonic
2sc1473.pdf pdf_icon

0.3. Size:47K hitachi
2sc1472.pdf pdf_icon

2SC1472(K)Silicon NPN Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92 (1)321. Emitter12. Collector3. Base3212SC1472 (K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 10 VCollector current IC 300 mACollector peak current

0.4. Size:126K no
2sc1475.pdf pdf_icon

0.5. Size:340K no
2sc1426.pdf pdf_icon

0.6. Size:104K savantic
2sc1402.pdf pdf_icon

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

0.7. Size:30K wingshing
2sc1413a.pdf pdf_icon

NPN TRIPLE DIFFUSED 2SC1413A PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed SwitchingABSOLUTE MAXIMUM RATINGS (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current

0.8. Size:66K wingshing
2sc1454.pdf pdf_icon

2SC1454 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-3ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 250 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 40 A Collector Dissipation (Tc=25 PC 50 W Junction Temperature Tj 150

0.9. Size:180K inchange semiconductor
2sc1444.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1444DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 8

0.10. Size:185K inchange semiconductor
2sc1447.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1447DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

0.11. Size:202K inchange semiconductor
2sc1403.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC1403DESCRIPTIONWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 160 VCBOV Collector-Emitter Voltage 100 VCEOV Emitter-Bas

0.12. Size:205K inchange semiconductor
2sc1413a.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1413ADESCRIPTIONHigh Collector-base breakdown voltage:1500VLow saturation voltage@5ALarge area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the horizontal output stage inpower-transformer-less television receivers.ABSOLUTE MAXIMU

0.13. Size:177K inchange semiconductor
2sc1441.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1441DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

0.14. Size:183K inchange semiconductor
2sc1449.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1449DESCRIPTIONHigh Collector Current I = 2.0ACCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.AB

0.15. Size:179K inchange semiconductor
2sc1456.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1456DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 3

0.16. Size:102K inchange semiconductor
2sc1402.pdf pdf_icon

0.17. Size:184K inchange semiconductor
2sc1446.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1446DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

0.18. Size:177K inchange semiconductor
2sc1431.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1431DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

0.19. Size:176K inchange semiconductor
2sc1454.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1454DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

0.20. Size:185K inchange semiconductor
2sc1418.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1418DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

0.21. Size:179K inchange semiconductor
2sc1450.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1450DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1

0.22. Size:184K inchange semiconductor
2sc1448.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1448DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

0.23. Size:180K inchange semiconductor
2sc1445.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1445DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1

0.24. Size:177K inchange semiconductor
2sc1433.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1433DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

0.25. Size:127K inchange semiconductor
2sc1413.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDI

0.26. Size:185K inchange semiconductor
2sc1419.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1419DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

0.27. Size:178K inchange semiconductor
2sc1469.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1469DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

0.28. Size:177K inchange semiconductor
2sc1440.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1440DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Datasheet: 2SC1395 , 2SC1396 , 2SC1398 , 2SC1398A , 2SC1399 , 2SC1399E , 2SC1399F , 2SC1399U , A1013 , 2SC140 , 2SC1400 , 2SC1400E , 2SC1400F , 2SC1400U , 2SC1401 , 2SC1403 , 2SC1403A .