All Transistors. 2SC1501 Datasheet

 

2SC1501 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC1501
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 9 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 27 MHz
   Collector Capacitance (Cc): 16 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT89

 2SC1501 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC1501 Datasheet (PDF)

 ..1. Size:59K  no
2sc1501.pdf

2SC1501

 ..2. Size:120K  inchange semiconductor
2sc1501.pdf

2SC1501 2SC1501

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1501 DESCRIPTION With TO-126 package High breakdown voltage Large power dissipation APPLICATIONS For medium power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base

 8.1. Size:123K  nec
2sc1505 2sc1506 2sc1507.pdf

2SC1501 2SC1501

 8.2. Size:52K  nec
2sc1505.pdf

2SC1501 2SC1501

Silicon Power Transistor2SC1505NPN 2SC1505 (1.5 W)

 8.3. Size:50K  panasonic
2sc1509 e.pdf

2SC1501 2SC1501

Transistor2SC1509Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA7775.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base vo

 8.4. Size:47K  panasonic
2sc1509.pdf

2SC1501 2SC1501

Transistor2SC1509Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA7775.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base vo

 8.5. Size:90K  savantic
2sc1505 1.pdf

2SC1501 2SC1501

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1

 8.6. Size:154K  jmnic
2sc1505.pdf

2SC1501 2SC1501

JMnic Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outl

 8.7. Size:115K  jmnic
2sc1507.pdf

2SC1501 2SC1501

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1507 DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PAR

 8.8. Size:179K  inchange semiconductor
2sc1504.pdf

2SC1501 2SC1501

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1504DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 4

 8.9. Size:191K  inchange semiconductor
2sc1505.pdf

2SC1501 2SC1501

isc Silicon NPN Power Transistor 2SC1505DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 50mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV chroma outputCircuits and sound output circui

 8.10. Size:187K  inchange semiconductor
2sc1507.pdf

2SC1501 2SC1501

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1507DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 50mACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color T

 8.11. Size:191K  inchange semiconductor
2sc1507-to220f.pdf

2SC1501 2SC1501

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1507 DESCRIPTION With TO-220F package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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