2SC1567
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1567
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 90
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.12
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 40
MHz
Collector Capacitance (Cc): 20
pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO126
2SC1567
Transistor Equivalent Substitute - Cross-Reference Search
2SC1567
Datasheet (PDF)
..1. Size:93K panasonic
2sc1567.pdf
Power Transistors2SC1567, 2SC1567ASilicon NPN epitaxial planar typeFor low-frequency high power driverUnit: mm8.0+0.50.13.20.2Complementary to 2SA0794, 2SA0794A 3.160.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 Woutput amplifier TO-126B package which requires no insulati
..2. Size:126K inchange semiconductor
2sc1567 2sc1567a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A DESCRIPTION With TO-126 package Complement to type 2SA794/794A High collector to emitter voltage VCEO APPLICATIONS For low-frequency high power driver applications Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN DESCRIPTION
..3. Size:195K inchange semiconductor
2sc1567.pdf
isc Silicon NPN Power Transistor 2SC1567DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA794Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency high power driver.Optimum for the driver stage of low-frequency and 40Wto 100W output
8.2. Size:94K panasonic
2sc1568.pdf
Power Transistors2SC1568Silicon NPN epitaxial planar typeFor low-voltage type medium output power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SA0900 3.160.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances and high efficiency with a low-voltage power supply TO-126B package which incorporate
8.3. Size:190K inchange semiconductor
2sc1568.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1568DESCRIPTIONSilicon NPN epitaxial planar typeLow Collector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage type medium output poweramplificationsABSOLUTE MAXIMUM
8.4. Size:191K inchange semiconductor
2sc1569.pdf
isc Silicon NPN Power Transistor 2SC1569DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-:V = 300V(Min)(BR)CEODC Current Gain-: h = 40-170 @I = 50mA, V = 10VFE C CEHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output applications.ABSOLUTE MAXIMUM
Datasheet: 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.