2SC1567A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1567A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 4 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 65
Noise Figure, dB: -
Package: TO126
2SC1567A Transistor Equivalent Substitute - Cross-Reference Search
2SC1567A Datasheet (PDF)
2sc1567 2sc1567a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A DESCRIPTION With TO-126 package Complement to type 2SA794/794A High collector to emitter voltage VCEO APPLICATIONS For low-frequency high power driver applications Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN DESCRIPTION
2sc1567.pdf
Power Transistors2SC1567, 2SC1567ASilicon NPN epitaxial planar typeFor low-frequency high power driverUnit: mm8.0+0.50.13.20.2Complementary to 2SA0794, 2SA0794A 3.160.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 Woutput amplifier TO-126B package which requires no insulati
2sc1567.pdf
isc Silicon NPN Power Transistor 2SC1567DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA794Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency high power driver.Optimum for the driver stage of low-frequency and 40Wto 100W output
2sc1568.pdf
Power Transistors2SC1568Silicon NPN epitaxial planar typeFor low-voltage type medium output power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SA0900 3.160.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances and high efficiency with a low-voltage power supply TO-126B package which incorporate
2sc1568.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1568DESCRIPTIONSilicon NPN epitaxial planar typeLow Collector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage type medium output poweramplificationsABSOLUTE MAXIMUM
2sc1569.pdf
isc Silicon NPN Power Transistor 2SC1569DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-:V = 300V(Min)(BR)CEODC Current Gain-: h = 40-170 @I = 50mA, V = 10VFE C CEHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output applications.ABSOLUTE MAXIMUM
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2SC4087 | EMD22FHA | 2N92 | EMF5 | FHC6287
History: 2SC4087 | EMD22FHA | 2N92 | EMF5 | FHC6287
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050