2SC1567A Datasheet and Replacement
Type Designator: 2SC1567A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 4 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 65
Noise Figure, dB: -
Package: TO126
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2SC1567A Datasheet (PDF)
2sc1567 2sc1567a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A DESCRIPTION With TO-126 package Complement to type 2SA794/794A High collector to emitter voltage VCEO APPLICATIONS For low-frequency high power driver applications Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN DESCRIPTION
2sc1567.pdf

Power Transistors2SC1567, 2SC1567ASilicon NPN epitaxial planar typeFor low-frequency high power driverUnit: mm8.0+0.50.13.20.2Complementary to 2SA0794, 2SA0794A 3.160.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 Woutput amplifier TO-126B package which requires no insulati
2sc1567.pdf

isc Silicon NPN Power Transistor 2SC1567DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA794Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency high power driver.Optimum for the driver stage of low-frequency and 40Wto 100W output
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: RN1909 | SPS4029 | MRF607 | TRF648 | MPQ5550 | NTE2547 | MJD128
Keywords - 2SC1567A transistor datasheet
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History: RN1909 | SPS4029 | MRF607 | TRF648 | MPQ5550 | NTE2547 | MJD128



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