2SC1622D16 PDF and Equivalents Search

 

2SC1622D16 Specs and Replacement

Type Designator: 2SC1622D16

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO236

 2SC1622D16 Substitution

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2SC1622D16 datasheet

 7.1. Size:234K  nec

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2SC1622D16

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 8.1. Size:210K  toshiba

2sc1627.pdf pdf_icon

2SC1622D16

2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Unit mm Voltage Amplifier Applications Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO ... See More ⇒

 8.2. Size:90K  toshiba

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2SC1622D16

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 8.3. Size:170K  toshiba

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2SC1622D16

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Detailed specifications: 2SC162 , 2SC1620 , 2SC1621 , 2SC1621B2 , 2SC1621B3 , 2SC1621B4 , 2SC1622 , 2SC1622A , SS8050 , 2SC1622D17 , 2SC1622D18 , 2SC1622D6 , 2SC1622D7 , 2SC1622D8 , 2SC1623 , 2SC1623L3 , 2SC1623L4 .

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