2N1711A pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N1711A Specs and Replacement

Type Designator: 2N1711A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO5

2N1711A Substitution

- BJT ⓘ Cross-Reference Search

2N1711A datasheet

8.1. Size:623K rca

2n1711.pdf pdf_icon

... See More ⇒

8.2. Size:51K philips

2n1711 cnv 2.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor 1997 May 28 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1711 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 emit... See More ⇒

8.3. Size:46K st

2n1711.pdf pdf_icon

2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Va... See More ⇒

8.4. Size:47K st

2n1711 .pdf pdf_icon