All Transistors. 2SC1626 Datasheet

 

2SC1626 Datasheet and Replacement


   Type Designator: 2SC1626
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.75 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220
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2SC1626 Datasheet (PDF)

 ..1. Size:112K  microelectronics
2sc1626 2sa816.pdf pdf_icon

2SC1626

 ..2. Size:191K  inchange semiconductor
2sc1626.pdf pdf_icon

2SC1626

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1626DESCRIPTIONSilicon NPN planar typeComplementary to 2SA816High breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 8.1. Size:210K  toshiba
2sc1627.pdf pdf_icon

2SC1626

2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VCollector-emitter voltage VCEO

 8.2. Size:90K  toshiba
2sc1624 2sc1625.pdf pdf_icon

2SC1626

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC640-016G | OC4435 | 2SB560G | BC139 | 2N5884G | 2SC815 | BC640-6

Keywords - 2SC1626 transistor datasheet

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