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2SC1626 Specs and Replacement

Type Designator: 2SC1626

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.75 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO220

 2SC1626 Substitution

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2SC1626 datasheet

 ..1. Size:112K  microelectronics

2sc1626 2sa816.pdf pdf_icon

2SC1626

... See More ⇒

 ..2. Size:191K  inchange semiconductor

2sc1626.pdf pdf_icon

2SC1626

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1626 DESCRIPTION Silicon NPN planar type Complementary to 2SA816 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

 8.1. Size:210K  toshiba

2sc1627.pdf pdf_icon

2SC1626

2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Unit mm Voltage Amplifier Applications Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO ... See More ⇒

 8.2. Size:90K  toshiba

2sc1624 2sc1625.pdf pdf_icon

2SC1626

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

Detailed specifications: 2SC1623 , 2SC1623L3 , 2SC1623L4 , 2SC1623L5 , 2SC1623L6 , 2SC1623L7 , 2SC1624 , 2SC1625 , 2222A , 2SC1627 , 2SC1627A , 2SC1627AO , 2SC1627AY , 2SC1628 , 2SC1629 , 2SC163 , 2SC1630 .

History: 2SC1645 | 2SD1342

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