2SC1636 Specs and Replacement
Type Designator: 2SC1636
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 120 °C
Electrical Characteristics
Transition Frequency (ft): 30 typ MHz
Collector Capacitance (Cc): 4 max pF
Forward Current Transfer Ratio (hFE), MIN: 500
Package: TO92MOD
2SC1636 Substitution
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2SC1636 datasheet
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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
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2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document a... See More ⇒
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G ... See More ⇒
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2SC1623 TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -C... See More ⇒
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2SC1623 PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES High DC Current Gain hFE=200(Typ.) VCE=6V, IC=1mA High Voltage VCEO = 50V MECHANICAL DATA Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING 2SC1623 - -T3 SOT-23 Tape Reel See Classifica... See More ⇒
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2SC1623 NPN Transistors 3 Features 2 1.Base High DC Current Gain 2.Emitter hFE = 200 TYP. 1 3.Collector VCE = 6.0 V, IC = 1.0 mA Simplified outline(SOT-23) High Voltage VCE O = 50 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current (D... See More ⇒
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Jingdao Microelectronics co.LTD 2SC1623 2SC1623 SOT-23 NPN TRANSISTOR 3 FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1.BASE Symbol Parameter Value Unit 2.EMITTER 3.COLLECTOR Collector Base Voltage VCBO 60 V Collector Emit... See More ⇒
2sc1623-l4 2sc1623-l5 2sc1623-l6 2sc1623-l7.pdf
2SC1623 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -Continuous 100 m... See More ⇒
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2SC1623 SOT 323 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 m... See More ⇒
2SC1623 2SC1623 2SC1623 2SC1623 2SC1623 TRANSISTOR(NPN) FEATURE SOT-23 High DC current gain hFE=200(Typ)VCE=6V, IC=1mA 1 BASE High voltage VCEO=50V 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Co... See More ⇒
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RoHS RoHS COMPLIANT COMPLIANT 2SC1623 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Halogen free available upon request by adding suffix HF Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-23 P Terminals Tin plated leads, solderable per ... See More ⇒
1 2SC1623W TRANSISTOR (NPN) FEATURE SOT- 323 High DC current gain h =200(Typ)V =6V, I =1mA FE CE C High voltage V =50V CEO MARKING L6 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V CBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V I Collector Current -Continuous 100 mA C P Collector Power... See More ⇒
2SC1623 TRANSISTOR (NPN) FEATURE SOT-23 High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V 1 BASE 2 EMITTER 3 COLLECTOR MARKING L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti... See More ⇒
2SC1623 BIPOLAR TRANSISTOR (NPN) FEATURES High DC current gain h =200(Typ) V =6V,I =1mA FE CE C High voltage V =50V CEO Surface Mount device Complementary to 2SA812 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe... See More ⇒
2sc1623-l4 2sc1623-l5 2sc1623-l6 2sc1623-l7.pdf
Features A SOT-23 L6 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 Maximum Ratings @ T = 25 C unless otherwise specified A J J 0.013 0.1... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1625 DESCRIPTION Silicon NPN planar type Complementary to 2SA815 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1610 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1624 DESCRIPTION Silicon NPN planar type Complementary to 2SA814 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1683 DESCRIPTION Silicon NPN triple diffused mesa High breakdown voltage Large collector dissipation Complementary pair with 2SA843 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifier Color TV vertical deflection output ABSO... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1678 DESCRIPTION Silicon NPN planar type High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1626 DESCRIPTION Silicon NPN planar type Complementary to 2SA816 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1617 DESCRIPTION Silicon NPN triple diffused type High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Black and white TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1672 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 DESCRIPTION With TO-220 package Complement to type 2SA814/815 High breakdown voltage APPLICATIONS Medium power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1618 DESCRIPTION High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1609 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1619 DESCRIPTION High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1667 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1623 DESCRIPTION SOT-23 plastic-encapsulate transistors High DC current gain h =200(TYP) FE @V = 6V, I = 1mA CE C High voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Detailed specifications: 2SC163 , 2SC1630 , 2SC1631 , 2SC1632 , 2SC1633 , 2SC1634 , 2SC1635 , 2SC1635F , 2N2907 , 2SC1637 , 2SC1638 , 2SC1639 , 2SC164 , 2SC1640 , 2SC1641 , 2SC1642 , 2SC1643 .
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