2N1713 Specs and Replacement
Type Designator: 2N1713
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.08 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO7
2N1713 Substitution
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2N1713 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor 1997 May 28 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1711 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 emit... See More ⇒
2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Va... See More ⇒
2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Va... See More ⇒
Detailed specifications: 2N1709, 2N1710, 2N1711, 2N1711-46, 2N1711A, 2N1711B, 2N1711L, 2N1711S, A1015, 2N1714, 2N1715, 2N1716, 2N1717, 2N1718, 2N1719, 2N172, 2N1720
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