2N1714 Specs and Replacement
Type Designator: 2N1714
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 16 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
- BJT ⓘ Cross-Reference Search
2N1714 datasheet
0.1. Size:317K no
2n1714s.pdf 
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL PRF 19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MIL S 19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive... See More ⇒
9.2. Size:51K philips
2n1711 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor 1997 May 28 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1711 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 emit... See More ⇒
9.3. Size:46K st
2n1711.pdf
2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Va... See More ⇒
9.4. Size:47K st
2n1711 .pdf
2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Va... See More ⇒
9.6. Size:318K no
2n1715s.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL PRF 19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MIL S 19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive... See More ⇒
9.7. Size:318K no
2n1717s.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL PRF 19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MIL S 19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive... See More ⇒
9.8. Size:318K no
2n1716s.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL PRF 19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MIL S 19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive... See More ⇒
9.10. Size:74K cdil
2n1711.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage, RBE ... See More ⇒
Detailed specifications: 2N1710, 2N1711, 2N1711-46, 2N1711A, 2N1711B, 2N1711L, 2N1711S, 2N1713, 13007, 2N1715, 2N1716, 2N1717, 2N1718, 2N1719, 2N172, 2N1720, 2N1721
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