2SC1672 Datasheet and Replacement

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1672DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 120V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

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2SC1674 0.02 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Switching and Amplification G HEmitterCollectorBase JCLASSIFICATION OF hFE A DMillimeter REF.Min. Max.Product-Rank 2SC1674-Y 2SC1674-GR 2SC1674-BLBA 4.40 4

2SC1675 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Collector Current G H General Purpose Switching and Amplification EmitterBase J CollectorA DCLASSIFICATION OF hFE Millimeter BREF.Min. Max.Product-Rank 2SC1675-R 2SC1

Transys ElectronicsL I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR (NPN) TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0. 25 W (Tamb=25) 2. COLLECTOR Collector current 3. BASE ICM: 0.02 A . 1 2 3 Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECT

2SC1675(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features 2SC1675 is designed for use in AM converter AM/FM if amplifier and local oscillator of AM/FM tuner MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeter

2SC1674 Rev.F Apr.-2018 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,,High gain bandwidth ,small output capacitance, low noise figure. / Applications ,

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1678DESCRIPTIONSilicon NPN planar typeHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE