2SC1679 Datasheet and Replacement
Type Designator: 2SC1679
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10
W
Maximum Collector-Base Voltage |Vcb|: 65
V
Maximum Collector-Emitter Voltage |Vce|: 65
V
Maximum Emitter-Base Voltage |Veb|: 4
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 100
MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package:
TO220
-
BJT ⓘ Cross-Reference Search
2SC1679 Datasheet (PDF)
8.1. Size:61K toshiba
2sc1678.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.4. Size:78K secos
2sc1674.pdf 

2SC1674 0.02 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Switching and Amplification G HEmitterCollectorBase JCLASSIFICATION OF hFE A DMillimeter REF.Min. Max.Product-Rank 2SC1674-Y 2SC1674-GR 2SC1674-BLBA 4.40 4
8.5. Size:77K secos
2sc1675.pdf 

2SC1675 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Collector Current G H General Purpose Switching and Amplification EmitterBase J CollectorA DCLASSIFICATION OF hFE Millimeter BREF.Min. Max.Product-Rank 2SC1675-R 2SC1
8.7. Size:108K transys
2sc1674.pdf 

Transys ElectronicsL I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR (NPN) TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0. 25 W (Tamb=25) 2. COLLECTOR Collector current 3. BASE ICM: 0.02 A . 1 2 3 Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECT
8.8. Size:191K lge
2sc1675.pdf 

2SC1675(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features 2SC1675 is designed for use in AM converter AM/FM if amplifier and local oscillator of AM/FM tuner MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeter
8.9. Size:1113K blue-rocket-elect
2sc1674.pdf 

2SC1674 Rev.F Apr.-2018 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,,High gain bandwidth ,small output capacitance, low noise figure. / Applications ,
8.10. Size:185K inchange semiconductor
2sc1678.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1678DESCRIPTIONSilicon NPN planar typeHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
8.11. Size:177K inchange semiconductor
2sc1672.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1672DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 120V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Datasheet: 2SC1674M
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