2SC1681 Specs and Replacement
Type Designator: 2SC1681
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 65 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO92
2SC1681 Substitution
- BJT ⓘ Cross-Reference Search
2SC1681 datasheet
Transistor 2SC1688 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Small common emitter reverse transfer capacitance Cre. High transition frequency fT. Center at the emitter pin. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 50 V 1.27 1.27 ... See More ⇒
Detailed specifications: 2SC1675L, 2SC1675M, 2SC1676, 2SC1677, 2SC1678, 2SC1679, 2SC168, 2SC1680, TIP35C, 2SC1682, 2SC1683, 2SC1683A, 2SC1684, 2SC1685, 2SC1686, 2SC1687, 2SC1688
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