2SC1683A Specs and Replacement
Type Designator: 2SC1683A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO220
2SC1683A Substitution
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2SC1683A datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1683 DESCRIPTION Silicon NPN triple diffused mesa High breakdown voltage Large collector dissipation Complementary pair with 2SA843 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifier Color TV vertical deflection output ABSO... See More ⇒
Transistor 2SC1688 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Small common emitter reverse transfer capacitance Cre. High transition frequency fT. Center at the emitter pin. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 50 V 1.27 1.27 ... See More ⇒
Detailed specifications: 2SC1677, 2SC1678, 2SC1679, 2SC168, 2SC1680, 2SC1681, 2SC1682, 2SC1683, BC558, 2SC1684, 2SC1685, 2SC1686, 2SC1687, 2SC1688, 2SC1689, 2SC169, 2SC1698
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