2SC1688 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1688
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 410 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 38
Noise Figure, dB: -
Package: TO92
2SC1688 Transistor Equivalent Substitute - Cross-Reference Search
2SC1688 Datasheet (PDF)
2sc1688 e.pdf
Transistor2SC1688Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesSmall common emitter reverse transfer capacitance Cre.High transition frequency fT.Center at the emitter pin.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 50 V1.27 1.27
2sc1683.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1683DESCRIPTIONSilicon NPN triple diffused mesaHigh breakdown voltageLarge collector dissipationComplementary pair with 2SA843100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF power amplifierColor TV vertical deflection outputABSO
Datasheet: 2SC1681 , 2SC1682 , 2SC1683 , 2SC1683A , 2SC1684 , 2SC1685 , 2SC1686 , 2SC1687 , TIP127 , 2SC1689 , 2SC169 , 2SC1698 , 2SC16A , 2SC17 , 2SC170 , 2SC1703 , 2SC1706 .
History: 2SA196
