2SC1708 Datasheet, Equivalent, Cross Reference Search

2SC1708 Transistor Equivalent Substitute - Cross-Reference Search

2SC1708 Datasheet (PDF)

4.1. 2sc1706.pdf Size:49K _hitachi

4.2. 2sc1707ah.pdf Size:61K _hitachi

 5.1. 2sc1766gp.pdf Size:128K _update

CHENMKO ENTERPRISE CO.,LTD 2SC1766GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.) C * PC= 1.0 to 2.0W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. * High sat

5.2. 2sc1741s.pdf Size:110K _update

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC1741S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High IC 3. BASE Low VCE(sat). Optimal for Low Voltage Operation Complements the 2SA854S MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Col

 5.3. 2sc1740s-q-r-s.pdf Size:323K _update

MCC Micro Commercial Components 2SC1740S-Q TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC1740S-R Phone: (818) 701-4933 2SC1740S-S Fax: (818) 701-4939 Features • Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate • Moisture Sensitivity

5.4. 2sc1740s.pdf Size:209K _update

SUNROC 2SC1740S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Low Cob 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units 3. BASE VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V 1 2 3 VEBO Emitter-Base Voltage 7 V IC Collector Current –Continuous 150 mA PC Collector Power Dissipation 300 mW TJ Junction

 5.5. 2sc1755.pdf Size:53K _sanyo

Ordering number:EN429E NPN Triple Diffused Planar Silicon Transistor 2SC1755 TV Chroma, Video, Audio Output Applications Package Dimensions unit:mm 2010C [2SC1755] JEDEC : TO-220AB 1 : Base EIAJ : SC-46 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 300 V Collector-to-Emitter Volt

5.6. 2sc1756.pdf Size:40K _sanyo

5.7. 2sc1741.pdf Size:74K _rohm

2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor (32V, 0.5A) 2SC2411K / 2SC4097 / 2SC1741S Features External dimensions (Units : mm) 1) High ICMax. 2SC2411K 2SC4097 ICMax. = 0.5mA 2.9�0.2 2) Low VCE(sat). 1.1+0.2 2.0�0.2 1.9�0.2 -0.1 1.3�0.1 0.9�0.1 0.8�0.1 0.95 0.95 Optimal for low voltage operation. 0.65 0.65 0.7�0.1 0.2 (1) (2) (1) (2) 3) Complements the 0

5.8. 2sc1741s.pdf Size:70K _rohm

2SC1741S Transistors Medium Power Transistor (32V, 0.5A) 2SC1741S Features External dimensions (Units : mm) 1) High ICMax. 2SC1741S ICMax. = 0.5A 2) Low VCE(sat). 4�0.2 2�0.2 Optimal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. 0.45+0.15 -0.05 Structure Epitaxial planar type 0.45+0.15 2.5+0.4 0.5 -0.05 -0.1 5 NPN silicon transist

5.9. 2sc2412k 2sc4081 2sc4617 2sc5658 2sc1740s.pdf Size:171K _rohm

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S ?Features ?Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 ?Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN silicon t

5.10. 2sc1741as.pdf Size:35K _rohm

2SD1949 / 2SD1484K / 2SC1741S Transistors Transistors 2SC3359S (96-678-D15) (SPEC-D16) 318

5.11. 2sc1778.pdf Size:79K _panasonic

5.12. 2sc1781h.pdf Size:43K _hitachi

5.13. 2sc1775.pdf Size:36K _hitachi

2SC1775, 2SC1775A Silicon NPN Epitaxial Application � Low frequency low noise amplifier � Complementary pair with 2SA872/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1775, 2SC1775A Absolute Maximum Ratings (Ta = 25�C) Item Symbol 2SC1775 2SC1775A Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltage VEBO 5

5.14. 2sc1729.pdf Size:129K _mitsubishi

5.15. 2sc1723.pdf Size:54K _no

5.16. 2sc1789.pdf Size:39K _no

5.17. 2sc1722.pdf Size:51K _no

5.18. 2sc1779.pdf Size:43K _no

5.19. 2sc1728 2sc1760.pdf Size:375K _sony

5.20. 2sc1740s.pdf Size:294K _secos

2SC1740S 0.15A , 60V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92S Low Cob CLASSIFICATION OF hFE Millimeter REF. Min. Max. A 3.90 4.10 Product-Rank 2SC1740S-Q 2SC1740S-R 2SC1740S-S B 3.05 3.25 C 1.42 1.62 Range 120~270 180~390 270~560 D 15.1 15.5 E 2.97 3

5.21. 2sc1755.pdf Size:181K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1755 DESCRIPTION ·With TO-220 package ·High breakdown voltage APPLICATIONS ·For TV chroma,video ,audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage O

5.22. 2sc1756.pdf Size:184K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1756 DESCRIPTION ·With TO-220 package ·High breakdown voltage APPLICATIONS ·For TV chroma,video ,audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Op

5.23. 2sc1755.pdf Size:151K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ For TV chroma,video ,audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC1755 Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base vol

5.24. 2sc1723.pdf Size:57K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1723 DESCRIPTION · ·With TO-220C package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Low frequency high voltage power amplifier ·TV power supply driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?)

5.25. 2sc1785.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1785 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER COND

5.26. 2sc1783.pdf Size:128K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1783 DESCRIPTION ·With TO-3 package ·High power dissipation ·High speed ,high current APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER COND

5.27. 2sc1777.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1777 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and sym

5.28. 2sc1756.pdf Size:151K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ For TV chroma,video ,audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC1756 Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base vol

5.29. 2sc1722.pdf Size:57K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1722 DESCRIPTION · ·With TO-220C package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Low frequency power amplifier ·TV horizontal/vertical driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBO

5.30. 2sc1730.pdf Size:81K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1730 DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 10 ps TYP. ·High Gain Bandwidth Product fT= 1100 MHz TYP. ·Low Output Capacitance; COB = 1.5 pF Max. APPLICATIONS ·Designed for TV VHF, UHF tuner oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE U

5.31. 2sc1766.pdf Size:372K _htsemi

2SC1766 SOT-89-3L TRANSISTOR(NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR High Speed Switching Time Low Collector-emitter saturation voltage 3. EMITTER APPLICATIONS Power Amplifier MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V

5.32. 2sc1740s to-92s.pdf Size:223K _lge

2SC1740S TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features Low Cob MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current –Continuous 150 mA PC Collector Power Dissipation 300 mW TJ Junction Tem

5.33. 2sc1766.pdf Size:356K _willas

FM120-M WILLAS THRU 2SC1766 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features TRANSISTOR (NPN) • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOT-89 FEATURES SOD-123H • Low profile surface mo

5.34. 2sc1740m.pdf Size:811K _blue-rocket-elect

2SC1740M(BR3DG1740M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 共基极输出电容小,与 2SA933M(BR3CG933M)互补。 Small base output capacitance, complementary pair with 2SA933M(BR3CG933M). 用途 / Applications 用于一般放大。 General purpose a

5.35. 2sc1741am.pdf Size:852K _blue-rocket-elect

2SC1741AM(BR3DG1741AM) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 集电极电流大,V 饱和压降低。 CE(sat) High IC, Low VCE(sat) 。 用途 / Applications 用于中功率放大。 Medium power transistor. 内部等效电路 / Equivalent Circuit

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