2SC1725 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1725
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 17 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 1.4 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 800 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO128
2SC1725 Transistor Equivalent Substitute - Cross-Reference Search
2SC1725 Datasheet (PDF)
2sc1723.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1723DESCRIPTIONSilicon NPN triple diffused LTPHigh breakdown voltageLarge collector dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency high voltage power amplifierTV power supply driversABSOLUTE MAXIMUM RATINGS(T
2sc1722.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1722DESCRIPTIONSilicon NPN triple diffused mesaHigh breakdown voltageLarge collector dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power amplifierTV horizontal/vertical driversABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: ED1802 | MMBT3250A | EMB52
