2SC1729 Specs and Replacement
Type Designator: 2SC1729
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 17 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: XM24
2SC1729 Substitution
- BJT ⓘ Cross-Reference Search
2SC1729 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1723 DESCRIPTION Silicon NPN triple diffused LTP High breakdown voltage Large collector dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency high voltage power amplifier TV power supply drivers ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
Detailed specifications: 2SC1721, 2SC1722, 2SC1723, 2SC1724, 2SC1725, 2SC1726, 2SC1727, 2SC1728, TIP120, 2SC172A, 2SC173, 2SC1730, 2SC1731, 2SC1732, 2SC1733, 2SC1734, 2SC1734H
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