2SC1762-1
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1762-1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.47
W
Maximum Collector-Base Voltage |Vcb|: 700
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.15
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 6
MHz
Collector Capacitance (Cc): 15
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package:
TO202
2SC1762-1
Transistor Equivalent Substitute - Cross-Reference Search
2SC1762-1
Datasheet (PDF)
8.2. Size:637K jiangsu
2sc1766.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate TransistorsSOT-89-3L 2SC1766 TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR Small Flat Package High Speed Switching Time3. EMITTER Low Collector-emitter saturation voltageAPPLICATIONS Power AmplifierMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value UnitVCBO Collector
8.3. Size:372K htsemi
2sc1766.pdf
2SC1766 SOT-89-3L TRANSISTOR(NPN)FEATURES 1. BASE Small Flat Package2. COLLECTOR High Speed Switching Time Low Collector-emitter saturation voltage 3. EMITTER APPLICATIONS Power AmplifierMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage
8.4. Size:356K willas
2sc1766.pdf
FM120-M WILLASTHRU2SC1766SOT-89 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesTRANSISTOR (NPN) Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOT-89 FEATURES SOD-123H Low profile surface
8.5. Size:128K chenmko
2sc1766gp.pdf
CHENMKO ENTERPRISE CO.,LTD2SC1766GPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 AmpereAPPLICATION* Power amplifier .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.)C* PC= 1.0 to 2.0W (mounted on ceramic substrate).4.6MAX. 1.6MAX.* High sat
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