2SC1779B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1779B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 450 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO92
2SC1779B Transistor Equivalent Substitute - Cross-Reference Search
2SC1779B Datasheet (PDF)
2sc1775.pdf
2SC1775, 2SC1775ASilicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA872/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1775, 2SC1775AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SC1775 2SC1775A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to base voltag
2sc1777.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1777DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 70V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
