2SC1779B Datasheet. Specs and Replacement
Type Designator: 2SC1779B 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 450 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO92
2SC1779B Substitution
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2SC1779B datasheet
2SC1775, 2SC1775A Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA872/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1775, 2SC1775A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC1775 2SC1775A Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltag... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1777 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
Detailed specifications: 2SC1774, 2SC1775, 2SC1775A, 2SC1776, 2SC1777, 2SC1778, 2SC1779, 2SC1779A, 2SC2655, 2SC178, 2SC1780, 2SC1781, 2SC1781H, 2SC1782, 2SC1783, 2SC1784, 2SC1785
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History: 2SD832 | 2SC4613 | MJE13003N8
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