All Transistors. 2SC1779B Datasheet

 

2SC1779B Datasheet and Replacement


   Type Designator: 2SC1779B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 450 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO92
 

 2SC1779B Substitution

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2SC1779B Datasheet (PDF)

 7.1. Size:43K  no
 2sc1779.pdf pdf_icon

2SC1779B

 8.1. Size:79K  panasonic
 2sc1778.pdf pdf_icon

2SC1779B

 8.2. Size:36K  hitachi
 2sc1775.pdf pdf_icon

2SC1779B

2SC1775, 2SC1775ASilicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA872/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1775, 2SC1775AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SC1775 2SC1775A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to base voltag

 8.3. Size:177K  inchange semiconductor
 2sc1777.pdf pdf_icon

2SC1779B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1777DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 70V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC3896 | 2SB1669 | RN1901FS | RN1909FE | 2SB190 | 2SB178B | KCP53-16

Keywords - 2SC1779B transistor datasheet

 2SC1779B cross reference
 2SC1779B equivalent finder
 2SC1779B lookup
 2SC1779B substitution
 2SC1779B replacement

 

 
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