All Transistors. 2SC1779B Datasheet

 

2SC1779B Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC1779B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 450 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO92

 2SC1779B Transistor Equivalent Substitute - Cross-Reference Search

   

2SC1779B Datasheet (PDF)

 7.1. Size:43K  no
2sc1779.pdf

2SC1779B

 8.1. Size:79K  panasonic
2sc1778.pdf

2SC1779B

 8.2. Size:36K  hitachi
2sc1775.pdf

2SC1779B
2SC1779B

2SC1775, 2SC1775ASilicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA872/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1775, 2SC1775AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SC1775 2SC1775A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to base voltag

 8.3. Size:177K  inchange semiconductor
2sc1777.pdf

2SC1779B
2SC1779B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1777DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 70V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Datasheet: 2SC1774 , 2SC1775 , 2SC1775A , 2SC1776 , 2SC1777 , 2SC1778 , 2SC1779 , 2SC1779A , A1013 , 2SC178 , 2SC1780 , 2SC1781 , 2SC1781H , 2SC1782 , 2SC1783 , 2SC1784 , 2SC1785 .

 

 
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