All Transistors. 2SC1852 Datasheet

 

2SC1852 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC1852

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO92

2SC1852 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC1852 Datasheet (PDF)

9.1. 2sc1815-t.pdf Size:213K _toshiba

2SC1852
2SC1852

9.2. 2sc1815l.pdf Size:308K _toshiba

2SC1852
2SC1852

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA)

 9.3. 2sc1815.pdf Size:272K _toshiba

2SC1852
2SC1852

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

9.4. 2sc1841.pdf Size:122K _nec

2SC1852
2SC1852

 9.5. 2sc1843.pdf Size:223K _nec

2SC1852
2SC1852

9.6. 2sc1842.pdf Size:213K _nec

2SC1852
2SC1852

9.7. 2sc1844.pdf Size:225K _nec

2SC1852
2SC1852

9.8. 2sc1845.pdf Size:188K _nec

2SC1852
2SC1852

9.9. 2sc1809.pdf Size:86K _rohm

2SC1852
2SC1852

9.10. 2sc1815-bl-gr-o-y.pdf Size:368K _mcc

2SC1852
2SC1852

2SC1815-OMCC2SC1815-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1815-GRCA 91311Phone: (818) 701-49332SC1815-BLFax: (818) 701-4939Features 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN SiliconAmplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.Epitaxial

9.11. 2sc1846.pdf Size:93K _panasonic

2SC1852
2SC1852

Power Transistors2SC1846Silicon NPN epitaxial planar typeFor medium output power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SA0885 3.160.1 Features Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with2SA0885 TO-126B package which requires no insulation plate for installa-tion t

9.12. 2sc1847.pdf Size:94K _panasonic

2SC1852
2SC1852

Power Transistors2SC1847Silicon NPN epitaxial planar typeFor medium output power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SA0886 3.160.1 Features Output of 4 W can be obtained by a complementary pair with2SA0886 TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings Ta = 25

9.13. 2sc1815.pdf Size:227K _utc

2SC1852
2SC1852

UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BV =50V CEO* Collector current up to 150mA * High h linearity FE* Complimentary to UTC 2SA1015 SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen

9.14. 2sc1881.pdf Size:35K _hitachi

2SC1852
2SC1852

2SC1881(K)Silicon NPN Triple DiffusedApplicationHigh gain amplifier power switchingOutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 6.8 k 400 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector current I

9.15. 2sc1890.pdf Size:24K _hitachi

2SC1852
2SC1852

2SC1890, 2SC1890ASilicon NPN EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SA893/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1890, 2SC1890AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SC1890 2SC1890A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to

9.16. 2sc1875.pdf Size:111K _mospec

2SC1852
2SC1852

AAA

9.17. 2sc1819.pdf Size:37K _no

2SC1852

9.18. 2sc1848.pdf Size:43K _no

2SC1852

9.19. 2sc1849.pdf Size:40K _no

2SC1852

9.20. 2sc1816.pdf Size:217K _sony

2SC1852
2SC1852

9.21. 2sc1810.pdf Size:293K _sony

2SC1852
2SC1852

9.22. 2sc1817.pdf Size:137K _sony

2SC1852
2SC1852

9.23. 2sc1827.pdf Size:69K _wingshing

2SC1852

2SC1827 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SA769ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junctio

9.24. 2sc1846.pdf Size:180K _jmnic

2SC1852
2SC1852

JMnic Product Specification Silicon NPN Power Transistors 2SC1846 DESCRIPTION With TO-126 package Complement to type 2SA885 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

9.25. 2sc1894.pdf Size:143K _jmnic

2SC1852
2SC1852

JMnic Product Specification Silicon NPN Power Transistors 2SC1894 DESCRIPTION With TO-3 package High breakdown voltage Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAME

9.26. 2sc1827.pdf Size:146K _jmnic

2SC1852
2SC1852

JMnic Product Specification Silicon NPN Power Transistors 2SC1827 DESCRIPTION With TO-220 package Complement to type 2SA769 Collector current :IC=4A Collector dissipation :PC=30W@TC=25 APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

9.27. 2sc1847.pdf Size:178K _jmnic

2SC1852
2SC1852

JMnic Product Specification Silicon NPN Power Transistors 2SC1847 DESCRIPTION With TO-126 package Complement to type 2SA886 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

9.28. 2sc1875.pdf Size:147K _jmnic

2SC1852
2SC1852

JMnic Product Specification Silicon NPN Power Transistors 2SC1875 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU

9.29. 2sc1893.pdf Size:143K _jmnic

2SC1852
2SC1852

JMnic Product Specification Silicon NPN Power Transistors 2SC1893 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For line-operated horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VAL

9.30. 2sc1815-m.pdf Size:168K _microelectronics

2SC1852
2SC1852

9.31. 2sc184.pdf Size:81K _usha

2SC1852
2SC1852

Transistors2SC184

9.32. 2sc1815.pdf Size:544K _shenzhen

2SC1852
2SC1852

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : 2SC1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

9.33. 2sc1815m.pdf Size:729K _blue-rocket-elect

2SC1852
2SC1852

2SC1815M(BR3DG1815M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,, h , FEHigh voltage and high current, excellent hFE linearity ,low noise. / Applications ,

9.34. 2sc1815.pdf Size:959K _kexin

2SC1852
2SC1852

SMD Type orSMD Type TransistICsNPN Transistors2SC1815SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13FeaturesPower dissipation 1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 60 VCollector to Emitter Voltage VCEO 50 VEmitter to Base Voltage VEBO 5

9.35. 2sc1846 3da1846.pdf Size:853K _foshan

2SC1852
2SC1852

2SC1846(3DA1846) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier. :V , 2SA885(3CA885) 3W CE(sat)Features: Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 45 V

9.36. 2sc1815lt1.pdf Size:122K _hfzt

2SC1852

2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN: 1 2 3Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25* PD 225 mWNO

9.37. 2sc1881.pdf Size:214K _inchange_semiconductor

2SC1852
2SC1852

isc Silicon NPN Darlington Power Transistor 2SC1881DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.2V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for High ga

9.38. 2sc1871a.pdf Size:177K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1871ADESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

9.39. 2sc1846.pdf Size:189K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1846DESCRIPTIONSilicon NPN epitaxial planar typeLow collector to emitter saturation voltageOutput of 3W can be obtained by a complementarywith 2SA0885100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuited for medium output power amplifier

9.40. 2sc1870.pdf Size:188K _inchange_semiconductor

2SC1852
2SC1852

isc Silicon NPN Power Transistor 2SC1870DESCRIPTIONWith TO-3 packageHigh switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 300 VCBOV Collector-Emitter Voltage 250 VCEOV Emitter-Base Vo

9.41. 2sc1894.pdf Size:177K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1894DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15

9.42. 2sc1819m.pdf Size:84K _inchange_semiconductor

2SC1852
2SC1852

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1819M DESCRIPTION With TO-220 package High VCEO Large PCAPPLICATIONS For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-220) and symbol3 Emitter Absolute maximum ratings (Ta

9.43. 2sc1863.pdf Size:180K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1863DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1

9.44. 2sc1827.pdf Size:192K _inchange_semiconductor

2SC1852
2SC1852

isc Silicon NPN Power Transistor 2SC1827DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 80(V)(Min.)(BR)CEOComplement to Type 2SA769Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

9.45. 2sc1815.pdf Size:175K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC1815DESCRIPTIONHigh Voltage and High CurrentVceo=50V(Min.Ic=150mA(Max)Excellent hFE LinearityLow NoiseComplement to Type 2SA1015(O,Y,GR class)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver sta

9.46. 2sc1847.pdf Size:192K _inchange_semiconductor

2SC1852
2SC1852

isc Silicon NPN Power Transistor 2SC1847DESCRIPTIONHigh Collector Current-I = 1.5ACLow Saturation Voltage: V = 1V(Max)@ I = 2.0A, I = 0.2ACE(sat) C BGood Linearity of hFEComplement to Type 2SA0886Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuited for the output stage of 3 watts audio amplifier,voltage regul

9.47. 2sc1868.pdf Size:178K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1868DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

9.48. 2sc1875.pdf Size:177K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1875DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 500V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

9.49. 2sc1848.pdf Size:163K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1848DESCRIPTIONSilicon NPN epitaxial planarHigh voltageComplement to Type 2SA887Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 70 VCB

9.50. 2sc1828.pdf Size:179K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1828DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 8

9.51. 2sc1895.pdf Size:177K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1895DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15

9.52. 2sc1826.pdf Size:184K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1826DESCRIPTIONHigh breakdown voltageLarge collector dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

9.53. 2sc1881k.pdf Size:215K _inchange_semiconductor

2SC1852
2SC1852

isc Silicon NPN Darlington Power Transistor 2SC1881KDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.2V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for High g

9.54. 2sc1880.pdf Size:186K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SC1880DESCRIPTIONHigh DC Current GainCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and

9.55. 2sc1893.pdf Size:177K _inchange_semiconductor

2SC1852
2SC1852

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1893DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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