2SC1862 Datasheet, Equivalent, Cross Reference Search

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1863DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1868DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA)

2SC1815-OMCC2SC1815-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1815-GRCA 91311Phone: (818) 701-49332SC1815-BLFax: (818) 701-4939Features 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN SiliconAmplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.Epitaxial

Power Transistors2SC1846Silicon NPN epitaxial planar typeFor medium output power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SA0885 3.160.1 Features Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with2SA0885 TO-126B package which requires no insulation plate for installa-tion t

Power Transistors2SC1847Silicon NPN epitaxial planar typeFor medium output power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SA0886 3.160.1 Features Output of 4 W can be obtained by a complementary pair with2SA0886 TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings Ta = 25

UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BV =50V CEO* Collector current up to 150mA * High h linearity FE* Complimentary to UTC 2SA1015 SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen

2SC1890, 2SC1890ASilicon NPN EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SA893/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1890, 2SC1890AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SC1890 2SC1890A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to

2SC1881(K)Silicon NPN Triple DiffusedApplicationHigh gain amplifier power switchingOutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 6.8 k 400 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector current I

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2SC1827 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SA769ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junctio

2S Equivalent Circuit

JMnic Product Specification Silicon NPN Power Transistors 2SC1893 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For line-operated horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VAL

JMnic Product Specification Silicon NPN Power Transistors 2SC1894 DESCRIPTION With TO-3 package High breakdown voltage Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAME

JMnic Product Specification Silicon NPN Power Transistors 2SC1827 DESCRIPTION With TO-220 package Complement to type 2SA769 Collector current :IC=4A Collector dissipation :PC=30W@TC=25 APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

JMnic Product Specification Silicon NPN Power Transistors 2SC1846 DESCRIPTION With TO-126 package Complement to type 2SA885 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

JMnic Product Specification Silicon NPN Power Transistors 2SC1875 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU

JMnic Product Specification Silicon NPN Power Transistors 2SC1847 DESCRIPTION With TO-126 package Complement to type 2SA886 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

Transistors2SC184

2SC1815TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation MARKING : 2SC1815=HF 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW

2SC1815 Silicon Epitaxial Planar TransistorFEATURES A High voltage and high current SOT-23 Dim Min MaxVCEO=50V(Min),IC=150mA(Max). A 2.70 3.10E Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA B 1.10 1.50K B hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) C 1.0 TypicalD 0.4 Typical Low noise.E 0.35 0.48JD Complementary to 2SA1015. G 1.80 2.00APPLIC

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : 2SC1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

2SC1815 Rev.E Nov.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,, h ,, 2SA1015 FEHigh voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015. / Applications

2SC1815M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,, h ,FEHigh voltage and high current, excellent hFE linearity ,low noise. / Applications ,A

2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor 2SA1015 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations.

SMD Type orSMD Type TransistICsNPN Transistors2SC1815SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2Power dissipation+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 60 VCollector to Emitter Voltage VCEO 50 VEmitter to Base Voltage VE

2SC1846(3DA1846) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier. :V , 2SA885(3CA885) 3W CE(sat)Features: Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 45 V

2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN: 1 2 3Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25* PD 225 mWNO

2SC1815 Equivalent Circuit Collector-Base Voltage 60 V Collector-Emitter Voltage 50 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.15 A Collector Power D

2SC2078Silicon NPN POWER TRANSISTORDESCRIPTIONB FSEATINGT PLANEC 4Designed primarily for SSB linear powerTSamplifier applicationsAQ1 2 3HFEATURESUKZ Specified 12.5V, 27MHz CharacteristicsL PO = 4W PEPV ft = 200 MHzSTYLE 1:RGPIN 1. BASE2. COLLECTORJD3. EMITTERN4. COLLECTORDIMENSIONSUNIT A B C D F G H J K L N Q R

2SC1815 SOT-23 Plastic-Encapsulate Transistors2SC1815 TRANSISTOR (NPN)SOT-23 FEATURES Power dissipation MARKING:2SC1815=HF 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector to Base Voltage 60 V CBOV Collector to Emitter Voltage 50 V CEOVEBO Emitter to Base Voltage 5 V IC Collector Current

www.msksemi.com2SC1815-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES Power dissipation 1. BASEMARKING : HF 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOVCEO Collector-Emitter Voltage 50 V V Emitter-Base Voltage 5 V EBOI Collector Cur

2SC1815SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES MARKING:HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 50 V VEBO Emitter-Base Volta

2SC18152 SC1815 TRANSISTOR (NPN) FEATURE SOT-23 Power dissipation 1BASE 2EMITTER 3COLLECTOR MARKING : HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 150 mAPC Collector Power Dissipation 200 mWT

2SC1815NPN GENERAL PURPOSE SWITCHING TRANSISTOR60Volts POWER 200mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=50V.Collector current IC=0.15A.ansition frequency fT>80MHz @ TrIC=1mAdc, VCE=10Vdc, f=30MHz.In compliance with EU RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Solde

2SC1815BIPOLAR TRANSISTOR (NPN)FEATURES High current And High voltage Excellent h LinearityFE Low Noise Surface Mount device Complementary to 2SA1015SOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise no

isc Silicon NPN Darlington Power Transistor 2SC1881KDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.2V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for High g

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1828DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 8

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1893DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1826DESCRIPTIONHigh breakdown voltageLarge collector dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1894DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15

isc Silicon NPN Power Transistor 2SC1870DESCRIPTIONWith TO-3 packageHigh switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 300 VCBOV Collector-Emitter Voltage 250 VCEOV Emitter-Base Vo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1848DESCRIPTIONSilicon NPN epitaxial planarHigh voltageComplement to Type 2SA887Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 70 VCB

isc Silicon NPN Power Transistor 2SC1827DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 80(V)(Min.)(BR)CEOComplement to Type 2SA769Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC1815DESCRIPTIONHigh Voltage and High CurrentVceo=50V(Min.Ic=150mA(Max)Excellent hFE LinearityLow NoiseComplement to Type 2SA1015(O,Y,GR class)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver sta

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1871ADESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1846DESCRIPTIONSilicon NPN epitaxial planar typeLow collector to emitter saturation voltageOutput of 3W can be obtained by a complementarywith 2SA0885100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuited for medium output power amplifier

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1819M DESCRIPTION With TO-220 package High VCEO Large PCAPPLICATIONS For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-220) and symbol3 Emitter Absolute maximum ratings (Ta

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1895DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1875DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 500V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

isc Silicon NPN Darlington Power Transistor 2SC1881DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.2V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for High ga

isc Silicon NPN Power Transistor 2SC1847DESCRIPTIONHigh Collector Current-I = 1.5ACLow Saturation Voltage: V = 1V(Max)@ I = 2.0A, I = 0.2ACE(sat) C BGood Linearity of hFEComplement to Type 2SA0886Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuited for the output stage of 3 watts audio amplifier,voltage regul

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SC1880DESCRIPTIONHigh DC Current GainCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and