All Transistors. 2SC1883K Datasheet

 

2SC1883K Datasheet and Replacement


   Type Designator: 2SC1883K
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO220
 

 2SC1883K Substitution

   - BJT ⓘ Cross-Reference Search

   

2SC1883K Datasheet (PDF)

 8.1. Size:35K  hitachi
 2sc1881.pdf pdf_icon

2SC1883K

2SC1881(K)Silicon NPN Triple DiffusedApplicationHigh gain amplifier power switchingOutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 6.8 k 400 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector current I

 8.2. Size:215K  inchange semiconductor
 2sc1881k.pdf pdf_icon

2SC1883K

isc Silicon NPN Darlington Power Transistor 2SC1881KDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.2V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for High g

 8.3. Size:214K  inchange semiconductor
 2sc1881.pdf pdf_icon

2SC1883K

isc Silicon NPN Darlington Power Transistor 2SC1881DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.2V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for High ga

 8.4. Size:186K  inchange semiconductor
 2sc1880.pdf pdf_icon

2SC1883K

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SC1880DESCRIPTIONHigh DC Current GainCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and

SHOW MORE

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BTC9013A3 | 2SD1264A | 3DD13003M8D | MJE6042T

Keywords - 2SC1883K transistor datasheet

 2SC1883K cross reference
 2SC1883K equivalent finder
 2SC1883K lookup
 2SC1883K substitution
 2SC1883K replacement

 

 
Back to Top

 


 
.