2SC1887 Datasheet. Specs and Replacement

Type Designator: 2SC1887  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1100 MHz

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO92

 2SC1887 Substitution

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2SC1887 datasheet

 8.1. Size:35K  hitachi

 2sc1881.pdf pdf_icon

2SC1887

2SC1881(K) Silicon NPN Triple Diffused Application High gain amplifier power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 6.8 k 400 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector current I... See More ⇒

 8.2. Size:215K  inchange semiconductor

 2sc1881k.pdf pdf_icon

2SC1887

isc Silicon NPN Darlington Power Transistor 2SC1881K DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.2V(Max)@ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for High g... See More ⇒

 8.3. Size:214K  inchange semiconductor

 2sc1881.pdf pdf_icon

2SC1887

isc Silicon NPN Darlington Power Transistor 2SC1881 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.2V(Max)@ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for High ga... See More ⇒

 8.4. Size:186K  inchange semiconductor

 2sc1880.pdf pdf_icon

2SC1887

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SC1880 DESCRIPTION High DC Current Gain Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and ... See More ⇒

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Detailed specifications: 2SC1882, 2SC1882H, 2SC1883, 2SC1883K, 2SC1884, 2SC1884H, 2SC1885, 2SC1886, C1815, 2SC1888, 2SC1889, 2SC189, 2SC1890, 2SC1890A, 2SC1891, 2SC1892, 2SC1893

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