2SC1890
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1890
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 90
V
Maximum Collector-Emitter Voltage |Vce|: 90
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 100
MHz
Collector Capacitance (Cc): 3.2
pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package:
TO92
2SC1890
Transistor Equivalent Substitute - Cross-Reference Search
2SC1890
Datasheet (PDF)
..1. Size:24K hitachi
2sc1890.pdf
2SC1890, 2SC1890ASilicon NPN EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SA893/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1890, 2SC1890AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SC1890 2SC1890A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to
8.1. Size:143K jmnic
2sc1893.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1893 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For line-operated horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VAL
8.2. Size:143K jmnic
2sc1894.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1894 DESCRIPTION With TO-3 package High breakdown voltage Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAME
8.3. Size:177K inchange semiconductor
2sc1893.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1893DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15
8.4. Size:177K inchange semiconductor
2sc1894.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1894DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15
8.5. Size:177K inchange semiconductor
2sc1895.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1895DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15
Datasheet: 2N3200
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