2SC191
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC191
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Emitter-Base Voltage |Veb|: 1
V
Maximum Collector Current |Ic max|: 0.01
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 20
MHz
Collector Capacitance (Cc): 6
pF
Forward Current Transfer Ratio (hFE), MIN: 21
Noise Figure, dB: -
Package:
TO5
2SC191
Transistor Equivalent Substitute - Cross-Reference Search
2SC191
Datasheet (PDF)
0.1. Size:118K jmnic
2sc1913 2sc1913a.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and sy
0.2. Size:125K inchange semiconductor
2sc1913 2sc1913a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symb
0.3. Size:190K inchange semiconductor
2sc1913.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1913DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency high power driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
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