2SC1910
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1910
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4
W
Maximum Collector-Base Voltage |Vcb|: 15
V
Maximum Collector-Emitter Voltage |Vce|: 8
V
Maximum Emitter-Base Voltage |Veb|: 2
V
Maximum Collector Current |Ic max|: 0.08
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 7000
MHz
Collector Capacitance (Cc): 1.1
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: XM25
2SC1910
Transistor Equivalent Substitute - Cross-Reference Search
2SC1910
Datasheet (PDF)
8.1. Size:118K jmnic
2sc1913 2sc1913a.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and sy
8.2. Size:125K inchange semiconductor
2sc1913 2sc1913a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symb
8.3. Size:190K inchange semiconductor
2sc1913.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1913DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency high power driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
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