2SC1920 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1920
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 7000 MHz
Collector Capacitance (Cc): 1.1 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: XM25
2SC1920 Transistor Equivalent Substitute - Cross-Reference Search
2SC1920 Datasheet (PDF)
2sc1923.pdf
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2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltag
2sc1927.pdf
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DATA SHEETSILICON TRANSISTOR2SC1927NPN SILICON EPITAXIAL DUAL TRANSISTORFOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHINGINDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONSThe 2SC1927 is an NPN silicon epitaxial dual transistor that (in millimeters)+0.3consists of two chips equivalent to the 2SC1275, and is designed for5.0 MIN. 3.5 0.2 5.0 MIN.differential amplifier an
2sc1921.pdf
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2SC1921Silicon NPN Triple DiffusedApplication High frequency high voltage amplifier Video outputOutlineTO-92MOD1. Emitter2. Collector3. Base3212SC1921Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 250 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 5VCollector current IC 50 mACollect
2sc1923.pdf
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2SC1923 0.02A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES AD General purpose switching and amplification. BCLASSIFICATION OF hFE Product-Rank 2SC1923-O 2SC1923-Y E CFRange 70~140 100~200G HEmitterMARKING CollectorBase JC1923
2sc1923.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1923 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V
2sc1922.pdf
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JMnic Product Specification Silicon NPN Power Transistors 2SC1922 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS
2sc1923.pdf
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DIP Type TransistorsNPN Transistors2SC1923Unit:mmTO-924.8 0.3 3.8 0.3 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=30V0.60 Max General Purpose Switching Application0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V
2sc1922.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1922DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
2sc1929.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1929DESCRIPTIONSi NPN planarCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF output for direct main operation TVABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .