2SC1923 Datasheet, Equivalent, Cross Reference Search

2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltag

2SC1923 0.02A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES AD General purpose switching and amplification. BCLASSIFICATION OF hFE Product-Rank 2SC1923-O 2SC1923-Y E CFRange 70~140 100~200G HEmitterMARKING CollectorBase JC1923

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1923 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V

DIP Type TransistorsNPN Transistors2SC1923Unit:mmTO-924.8 0.3 3.8 0.3 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=30V0.60 Max General Purpose Switching Application0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V

DATA SHEETSILICON TRANSISTOR2SC1927NPN SILICON EPITAXIAL DUAL TRANSISTORFOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHINGINDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONSThe 2SC1927 is an NPN silicon epitaxial dual transistor that (in millimeters)+0.3consists of two chips equivalent to the 2SC1275, and is designed for5.0 MIN. 3.5 0.2 5.0 MIN.differential amplifier an

2SC1921Silicon NPN Triple DiffusedApplication High frequency high voltage amplifier Video outputOutlineTO-92MOD1. Emitter2. Collector3. Base3212SC1921Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 250 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 5VCollector current IC 50 mACollect

JMnic Product Specification Silicon NPN Power Transistors 2SC1922 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1922DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1929DESCRIPTIONSi NPN planarCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF output for direct main operation TVABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI