2SC1930A Datasheet. Specs and Replacement
Type Designator: 2SC1930A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 16 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 7000 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: U88
2SC1930A Substitution
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2SC1930A datasheet
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isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION High Power Gain- G 7dB, P = 6W; V = 13.5V pe O CE High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1922 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO ... See More ⇒
isc Silicon NPN Power Transistor 2SC1953 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA914 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1929 DESCRIPTION Si NPN planar Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF output for direct main operation TV ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symb... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1904 DESCRIPTION Low collector to emitter saturation voltage Output of 1W can be obtained by a complementary with 2SA899 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Power Transistor 2SC1969 DESCRIPTION With TO-220 packaging Reliable performance at higher powers Accurate reproduction of Input signal Greater dynamic range Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplif... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1906 DESCRIPTION Low Noise High Gain Bandwidth Product 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF amplifier,mixer and local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1970 DESCRIPTION High Power Gain- G 9.2dB,f= 175MHz, P = 1W; V = 13.5V pe O CC High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATING... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1913 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency high power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1905 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
Detailed specifications: 2SC1924, 2SC1925, 2SC1926, 2SC1927, 2SC1928, 2SC1929, 2SC193, 2SC1930, 2SC2655, 2SC1930F, 2SC1931, 2SC1931F, 2SC1932, 2SC1932F, 2SC1933, 2SC1933F, 2SC1934
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