2N175 Datasheet and Replacement

   Type Designator: 2N175
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.02 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.002 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 0.3 MHz
   Collector Capacitance (Cc): 36 pF
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: TO40
     - BJT ⓘ Cross-Reference Search