All Transistors. 2SC1938F Datasheet

 

2SC1938F Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC1938F

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 6000 MHz

Collector Capacitance (Cc): 0.6 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SP3

2SC1938F Transistor Equivalent Substitute - Cross-Reference Search

 

2SC1938F Datasheet (PDF)

5.1. 2sc1959-gr-o-y.pdf Size:266K _update

2SC1938F
2SC1938F

2SC1959-O MCC Micro Commercial Components TM 2SC1959-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SC1959-GR Fax: (818) 701-4939 Features • Audio frequency low power amplifier applications, driver stage Power Silicon amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA

5.2. 2sc1923.pdf Size:525K _toshiba

2SC1938F
2SC1938F

2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications • Small reverse transfer capacitance: Cre = 0.7 pF (typ.) • Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltag

 5.3. 2sc1959.pdf Size:199K _toshiba

2SC1938F
2SC1938F

2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity : h = 25 (min): V = 6 V, I = 400 mA FE (2) CE C • 1 watt amplifier applications. • Complementary to 2SA562TM. Maximum Ratings (Ta = = 25°C) = =

5.4. 2sc1927.pdf Size:36K _nec

2SC1938F
2SC1938F

DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that (in millimeters) +0.3 consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN. 3.5 0.2 5.0 MIN. differential amplifier and ult

 5.5. 2sc1941.pdf Size:168K _nec

2SC1938F
2SC1938F

5.6. 2sc1940.pdf Size:169K _nec

2SC1938F
2SC1938F

5.7. 2sc1980.pdf Size:37K _panasonic

2SC1938F
2SC1938F

Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit: mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage

5.8. 2sc1980 e.pdf Size:41K _panasonic

2SC1938F
2SC1938F

Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit: mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage

5.9. 2sc1953 2sa914.pdf Size:78K _panasonic

2SC1938F
2SC1938F

5.10. 2sc1921.pdf Size:30K _hitachi

2SC1938F
2SC1938F

2SC1921 Silicon NPN Triple Diffused Application High frequency high voltage amplifier Video output Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC1921 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 250 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 5V Collector current IC 50 mA Collector power

5.11. 2sc1942.pdf Size:39K _hitachi

2SC1938F

5.12. 2sc1906.pdf Size:43K _hitachi

2SC1938F
2SC1938F

2SC1906 Silicon NPN Epitaxial Planar ADE-208-1058 (Z) 1st. Edition Mar. 2001 Application VHF amplifier Mixer, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1906 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 19 V Emitter to base voltage VEBO 2V Collector cur

5.13. 2sc1907.pdf Size:39K _hitachi

2SC1938F
2SC1938F

2SC1907 Silicon NPN Epitaxial Planar Application UHF TV Tuner, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1907 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 19 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Emitter current IE 50 mA Collector pow

5.14. 2sc1947.pdf Size:126K _mitsubishi

2SC1938F
2SC1938F

5.15. 2sc1971.pdf Size:121K _mitsubishi

2SC1938F
2SC1938F

5.16. 2sc1945.pdf Size:132K _mitsubishi

2SC1938F
2SC1938F

5.17. 2sc1969.pdf Size:145K _mitsubishi

2SC1938F
2SC1938F

5.18. 2sc1972.pdf Size:130K _mitsubishi

2SC1938F
2SC1938F

5.19. 2sc1944.pdf Size:54K _mitsubishi

2SC1938F

5.20. 2sc1946.pdf Size:130K _mitsubishi

2SC1938F
2SC1938F

5.21. 2sc1970.pdf Size:154K _mitsubishi

2SC1938F
2SC1938F

5.22. 2sc1966.pdf Size:125K _mitsubishi

2SC1938F
2SC1938F

5.23. 2sc1968a.pdf Size:132K _mitsubishi

2SC1938F
2SC1938F

5.24. 2sc1967.pdf Size:205K _mitsubishi

2SC1938F
2SC1938F

5.25. 2sc1974.pdf Size:37K _no

2SC1938F

5.26. 2sc1908.pdf Size:258K _no

2SC1938F
2SC1938F

5.27. 2sc1975.pdf Size:37K _no

2SC1938F

5.28. 2sc1923.pdf Size:92K _secos

2SC1938F

2SC1923 0.02A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES A D ? General purpose switching and amplification. B CLASSIFICATION OF hFE Product-Rank 2SC1923-O 2SC1923-Y E C F Range 70~140 100~200 G H ?Emitter MARKING ?Collector ?Base J C1923 Millimeter

5.29. 2sc1959.pdf Size:607K _secos

2SC1938F
2SC1938F

2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Excellent hFE Linearity ? High Transition Frequency Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - CLASSIFICATION OF hFE D 3.30 3.81 E 0.36 0.56 Product-Rank 2SC1959-O 2SC1959-Y 2SC19

5.30. 2sc1983.pdf Size:64K _wingshing

2SC1938F

2SC1983 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS SC-65 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25? PC 30 W ? ? ? Junction Temperature Tj 150 ? ? ? ? ? Stora

5.31. 2sc1942.pdf Size:144K _jmnic

2SC1938F
2SC1938F

JMnic Product Specification Silicon NPN Power Transistors 2SC1942 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE

5.32. 2sc1922.pdf Size:144K _jmnic

2SC1938F
2SC1938F

JMnic Product Specification Silicon NPN Power Transistors 2SC1922 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE

5.33. 2sc1905.pdf Size:147K _jmnic

2SC1938F
2SC1938F

JMnic Product Specification Silicon NPN Power Transistors 2SC1905 DESCRIPTION · ·With TO-220C package ·High breakdown voltage ·Large collector power dissipation APPLICATIONS ·Color TV horizontal deflection driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT

5.34. 2sc1913 2sc1913a.pdf Size:118K _jmnic

2SC1938F
2SC1938F

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbo

5.35. 2sc1985 2sc1986.pdf Size:83K _sanken-ele

2SC1938F

5.36. 2sc1985 2sc1986.pdf Size:58K _inchange_semiconductor

2SC1938F
2SC1938F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1985 2SC1986 DESCRIPTION ·With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?)

5.37. 2sc1953.pdf Size:134K _inchange_semiconductor

2SC1938F
2SC1938F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT

5.38. 2sc1904.pdf Size:113K _inchange_semiconductor

2SC1938F
2SC1938F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1904 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA899 APPLICATIONS ·For high frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-bas

5.39. 2sc1929.pdf Size:63K _inchange_semiconductor

2SC1938F
2SC1938F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1929 DESCRIPTION · ·With TO-220C package ·High VCEO ·Large PC APPLICATIONS ·AF output for direct main operation TV PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base

5.40. 2sc1971.pdf Size:203K _inchange_semiconductor

2SC1938F
2SC1938F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION ·High Power Gain- : Gpe? 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collec

5.41. 2sc1969.pdf Size:202K _inchange_semiconductor

2SC1938F
2SC1938F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION ·High Power Gain- : Gpe?12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collecto

5.42. 2sc1942.pdf Size:115K _inchange_semiconductor

2SC1938F
2SC1938F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1942 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ For TV horizontal output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCB

5.43. 2sc1906.pdf Size:180K _inchange_semiconductor

2SC1938F
2SC1938F

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1906 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF amplifier,mixer and local oscillator. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2

5.44. 2sc1922.pdf Size:115K _inchange_semiconductor

2SC1938F
2SC1938F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1922 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ For TV horizontal output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCB

5.45. 2sc1905.pdf Size:117K _inchange_semiconductor

2SC1938F
2SC1938F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1905 DESCRIPTION Ў¤ With TO-220C package Ў¤ High breakdown voltage Ў¤ Large collector power dissipation APPLICATIONS Ў¤ Color TV horizontal deflection driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VC

5.46. 2sc1907.pdf Size:155K _inchange_semiconductor

2SC1938F
2SC1938F

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1907 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for VHF TV tuner and local oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2 V

5.47. 2sc1970.pdf Size:204K _inchange_semiconductor

2SC1938F
2SC1938F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1970 DESCRIPTION ·High Power Gain- : Gpe? 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Colle

5.48. 2sc1913 2sc1913a.pdf Size:125K _inchange_semiconductor

2SC1938F
2SC1938F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA913/913A Ў¤ Large collector power dissipation Ў¤ High VCEO APPLICATIONS Ў¤ Audio frequency high power driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DES

5.49. 2sc1959.pdf Size:297K _lge

2SC1938F
2SC1938F

2SC1959(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 0.5 A PC Collector Power Dissipation 500 mW

5.50. 2sc1959m.pdf Size:715K _blue-rocket-elect

2SC1938F
2SC1938F

2SC1959M(BR3DG1959M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 极好的 h 特性,与 2SA562M(BR3CG562M)互补。 FE Excellent hFE Linearity, complementary pair with 2SA562M(BR3CG562M). 用途 / Applications 用于音频小功率放大,激励级放大及开

5.51. 2sc1923.pdf Size:1024K _kexin

2SC1938F
2SC1938F

DIP Type Transistors NPN Transistors 2SC1923 Unit:mm TO-92 4.8 ± 0.3 3.8 ± 0.3 ■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=30V 0.60 Max ● General Purpose Switching Application 0.45 ± 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base V

Datasheet: 2SC1934F , 2SC1935 , 2SC1935F , 2SC1936 , 2SC1936F , 2SC1937 , 2SC1937F , 2SC1938 , BC550 , 2SC1939 , 2SC1939F , 2SC194 , 2SC1940 , 2SC1941 , 2SC1942 , 2SC1943 , 2SC1944 .

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