2SC1951 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1951
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 120 °C
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 2.8 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
2SC1951 Transistor Equivalent Substitute - Cross-Reference Search
2SC1951 Datasheet (PDF)
2sc1959.pdf
2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : h = 25 (min): V = 6 V, I = 400 mA FE (2) CE C 1 watt amplifier applications. Complementary to 2SA562TM. Maximum Ratings (Ta == 25C) ==
2sc1959-gr-o-y.pdf
2SC1959-OMCCMicro Commercial ComponentsTM2SC1959-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SC1959-GRFax: (818) 701-4939Features Audio frequency low power amplifier applications, driver stage Power Siliconamplifier applications, switching applications Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA
2sc1959.pdf
2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearity High Transition Frequency MillimeterREF.Min. Max.A 4.40 4.70B 4.30 4.70C 12.70 -CLASSIFICATION OF hFE D 3.30 3.81E 0.36 0.56Product-Rank 2SC1959-O 2SC1959-
2sc1959.pdf
2SC1959(NPN)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current Continuous 0.5 A PC Collector Power Dissipation 500 mW
2sc1959m.pdf
2SC1959M(BR3DG1959M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features h , 2SA562M(BR3CG562M)FEExcellent hFE Linearity, complementary pair with 2SA562M(BR3CG562M). / Applications ,
2sc1953.pdf
isc Silicon NPN Power Transistor 2SC1953DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA914Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power pre-amplification,whichis optimum for the pre-driver stage of a 60 W to 100 W
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
